Infineon IPP60R165CP: 165mΩ Superjunction Power MOSFET for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced switched-mode power supplies (SMPS), motor control systems, and power conversion units lies the power MOSFET. The Infineon IPP60R165CP stands out as a premier solution, engineered to meet these challenges with its exceptional combination of low on-state resistance and high switching performance.

This Superjunction (SJ) MOSFET is built on Infineon's proprietary technology, which allows for a significant reduction in specific on-resistance for a given die size. The standout feature of this device is its ultra-low typical on-state resistance (RDS(on)) of just 165mΩ at a gate-source voltage of 10 V. This low resistance is critical for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for more compact thermal management solutions.

Designed for high-voltage applications, the IPP60R165CP boasts a drain-source voltage (VDS) rating of 650V, making it an ideal candidate for operations off rectified mains voltages in regions worldwide. It is particularly effective in circuits like Power Factor Correction (PFC), telecom and server power supplies, and industrial lighting ballasts, where efficiency and reliability are paramount.

Beyond its static performance, the device excels in dynamic operation. The Superjunction technology ensures exceptionally low gate charge (QG) and low output capacitance (EOSS). These characteristics are vital for achieving high switching speeds, which reduces switching losses and allows for operation at higher frequencies. A higher switching frequency, in turn, enables the use of smaller passive components like inductors and transformers, leading to an overall increase in power density.

The part is offered in the TO-220 FullPAK package. This industry-standard package provides a mechanically robust and isolated mounting option, enhancing safety and simplifying the assembly process by eliminating the need for an additional insulation kit between the device and the heatsink.

ICGOOODFIND: The Infineon IPP60R165CP is a high-performance Superjunction MOSFET that sets a high bar for efficiency in power electronics. Its optimal blend of ultra-low 165mΩ RDS(on), high voltage capability, and excellent switching characteristics makes it a superior choice for designers aiming to maximize performance in high-efficiency switching applications, from SMPS to industrial motor drives.

Keywords: Superjunction MOSFET, Low RDS(on), High-Efficiency Switching, 650V Rating, Power Density.