Infineon BGA855N6: A 6 W High-Gain Low-Noise Amplifier for 4 – 7 GHz Applications

The demand for robust and high-performance RF components continues to grow, driven by the expansion of modern communication infrastructure, including 5G networks, satellite communications, and radar systems. Addressing the critical need for signal integrity and power in the mid-band microwave spectrum, Infineon Technologies introduces the BGA855N6, a standout 6 W high-gain low-noise amplifier (LNA) engineered specifically for 4 – 7 GHz applications.

This amplifier integrates exceptional performance characteristics into a compact, surface-mount package. A key highlight is its impressive high gain of up to 22 dB, which significantly boosts weak signals without the immediate need for additional amplification stages. This simplifies system design and reduces the overall component count. Furthermore, the device maintains an exceptionally low noise figure of just 1.4 dB, ensuring that the signal is amplified with minimal addition of inherent noise. This combination of high gain and low noise is crucial for enhancing receiver sensitivity and extending the effective range of systems.

Beyond its signal amplification capabilities, the BGA855N6 is built for resilience and high power output. It delivers a saturated output power (PSAT) of 6 W (37.8 dBm), making it not just an LNA but also a driver amplifier capable of handling substantial power levels. This is complemented by a high output third-order intercept point (OIP3) of 43 dBm, underscoring its superior linearity and ability to minimize distortion in the presence of strong interfering signals.

Housed in a space-efficient 6-lead PQFN package, the amplifier is designed for simplified integration into a wide array of designs. Its performance is stabilized across a wide supply voltage range (5 – 7 V) and is maintained over an operating temperature range of -40 °C to +105 °C, guaranteeing reliability in demanding environmental conditions. Typical applications include terrestrial and satellite communications, military and weather radar systems, and test and measurement equipment.

ICGOODFIND: The Infineon BGA855N6 is a superior solution that masterfully balances the often-contradictory demands of high gain, low noise, and high power. Its robust performance from 4 to 7 GHz makes it an indispensable component for advancing next-generation RF and microwave systems.

Keywords: High-Gain LNA, Low Noise Figure, 6 W Power Amplifier, 4-7 GHz, Microwave Applications.