Infineon IPD65R225C7: A 650V CoolMOS™ Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switching device is critical. The Infineon IPD65R225C7, a 650V CoolMOS™ Power Transistor, stands out as a premier solution engineered to meet these challenges, offering a blend of exceptional switching performance and high reliability.

Built on Infineon’s advanced superjunction (SJ) technology, this transistor is designed to minimize both conduction and switching losses. With an ultra-low typical on-state resistance (RDS(on)) of just 225 mΩ, the IPD65R225C7 ensures superior conductivity, which directly translates to reduced heat generation and higher efficiency during operation. This characteristic is paramount for applications like server and telecom SMPS (Switched-Mode Power Supplies), where energy savings and thermal management are crucial.

A key advantage of the CoolMOS™ C7 series is its optimized gate charge (Qg). This feature allows for faster switching speeds, which enables systems to operate at higher frequencies. The ability to switch faster reduces the size of necessary passive components like transformers and capacitors, thereby increasing the overall power density of the design. This makes the IPD65R225C7 an ideal choice for compact, high-power adapters and industrial power systems.

Furthermore, the device boasts a high avalanche ruggedness and is qualified for 100% repetitive avalanche testing, ensuring robust performance and long-term reliability even under harsh operating conditions and voltage spikes. Its low effective output capacitance (COSS(eff)) also contributes to lower turn-on losses, particularly in quasi-resonant (QR) and burst-mode operations common in modern power supplies.

ICGOOODFIND: The Infineon IPD65R225C7 CoolMOS™ transistor is a high-performance component that significantly elevates the efficiency, power density, and reliability of modern power electronics. Its optimal balance of low RDS(on) and switching losses makes it a superior choice for designers aiming to push the boundaries of their next-generation power conversion systems.

Keywords: High Efficiency, CoolMOS™, Superjunction Technology, Low RDS(on), Power Density