Infineon IPP083N10N5: High-Performance N-Channel Power MOSFET for Efficient Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics demands components that deliver exceptional performance. The Infineon IPP083N10N5 stands out as a premier N-Channel power MOSFET engineered specifically to meet these challenges in a wide array of switching applications. This device encapsulates advanced semiconductor technology, offering system designers a powerful tool to minimize losses and maximize reliability.
Built on Infineon's proprietary OptiMOS 5 technology platform, the IPP083N10N5 is designed for low voltage applications, featuring a 100V drain-source voltage (VDS) rating and a continuous drain current (ID) of 83A. Its core strength lies in its exceptionally low typical on-state resistance (RDS(on)) of just 8.3 mΩ at 10 V gate-source voltage. This ultra-low RDS(on) is pivotal in reducing conduction losses, which directly translates to higher efficiency, less heat generation, and the potential for smaller heatsinks or simplified thermal management designs.
Beyond its static performance, the MOSFET excels in dynamic operation. It features low gate charge (QG) and outstanding switching characteristics, which are crucial for high-frequency operation. By minimizing switching losses, the device enables power supplies, motor drives, and DC-DC converters to operate at higher frequencies. This allows for the use of smaller passive components like inductors and capacitors, significantly increasing the overall power density of the system.
The device is offered in a SuperSO8 package (PG-TDSON-8), which provides an excellent balance between compact size and superior thermal and electrical performance. The package's low parasitic inductance ensures stable switching and reduces voltage overshoot, enhancing system robustness. Furthermore, its high avalanche ruggedness and 100% repetitive avalanche tested capability ensure high reliability even under the most demanding conditions, such as in automotive systems, industrial motor controls, and high-performance computing power supplies.
ICGOOODFIND: The Infineon IPP083N10N5 is a benchmark in power MOSFET technology, combining ultra-low RDS(on), fast switching speed, and high reliability in a compact package. It is an ideal solution for designers aiming to push the boundaries of efficiency and power density in applications like server and telecom SMPS, battery management systems (BMS), synchronous rectification, and motor control.
Keywords: OptiMOS 5, Low RDS(on), High Efficiency, Fast Switching, SuperSO8 Package.
