Infineon BSC430N25NSFDATMA1: High-Performance 25V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and power density are paramount. The Infineon BSC430N25NSFDATMA1 stands out as a premier solution, addressing these critical demands with its advanced OptiMOS™ 5 technology. This 25V N-channel power MOSFET is engineered to deliver exceptional efficiency and robustness in a wide array of applications, from server and telecom power supplies to high-frequency DC-DC converters and motor control systems.

A key highlight of this MOSFET is its extremely low figure-of-merit (R DS(on) Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 0.43 mΩ at 10 V, it minimizes conduction losses significantly. This allows for more power to be delivered to the load with less energy wasted as heat. Furthermore, its low gate charge (Q G) ensures swift switching transitions, which is crucial for reducing switching losses in high-frequency operation. This combination makes it an ideal choice for designing highly efficient power stages that can operate at elevated switching frequencies, enabling the use of smaller passive components and ultimately leading to higher power density and a more compact system footprint.

The device is housed in the SuperSO8 package, which offers a superior thermal performance compared to standard SO-8 packages. Its improved thermal characteristics ensure that the junction temperature is kept low even under high stress, enhancing long-term reliability and system longevity. The BSC430N25NSFDATMA1 is also designed for ease of use in automated manufacturing processes, featuring a gull-wing leadform for excellent board-level reliability.

ICGOOODFIND: The Infineon BSC430N25NSFDATMA1 OptiMOS 5 MOSFET sets a high bar for performance in its voltage class, offering designers a potent combination of ultra-low resistance, fast switching speed, and excellent thermal management to create the next generation of efficient and compact power solutions.

Keywords: Power MOSFET, OptiMOS 5, Low R DS(on), High Efficiency, SuperSO8